ORGANIC THIN-FILM TRANSISTOR

摘要

The present invention relates to organic thin-film transistors using an organic compound in the semiconductor layer thereof. The organic semiconductor layer is made by means of Cascade Crystallization Process. Said layer is characterized by a globally ordered crystalline structure with intermolecular spacing of 3.4 ± 0.3 Å in the direction of one crystal axis. This layer is formed by rodlike supramolecules comprising at least one polycyclic organic compound with conjugated pi-system and has electron-hole type of conductivity.