| 摘要 |
A semiconductor memory device capable of achieving high integration is provided. A semiconductor memory device is provided with: a silicon substrate; bipolar transistors formed on the silicon substrate; an interlayer insulating film which has contact holes accepting parts of the bipolar transistors and reaching a surface of the silicon substrate, and which is formed on the silicon substrate; and storage elements electrically connected to the bipolar transistors. The storage elements have a first state in which an electrical resistance is relatively high and a second state in which an electrical resistance is relatively low. |
