发明名称 |
Method of fabrication of an infrared radiation detector and infrared detector device |
摘要 |
A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.
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申请公布号 |
US6884636(B2) |
申请公布日期 |
2005.04.26 |
申请号 |
US20010861334 |
申请日期 |
2001.05.18 |
申请人 |
INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM (IMEC,VZW) |
发明人 |
FIORINI PAOLO;SEDKY SHERIF;CAYMAX MATTY;BAERT CHRISTIAAN |
分类号 |
G01J1/02;B81B3/00;B81C1/00;G01J5/20;H01L31/0248;H01L31/09;H01L31/18;(IPC1-7):G01R31/26;H01L21/66 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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