| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a high dielectric constant film on a substrate, for which hydrogen passivation is carried out. SOLUTION: The method for forming an interface layer on a substrate surface, for which the hydrogen passivation is carried out, is provided. The method utilizes atomic layer deposition technology, by which nitric acid metal base precursor (for example, nitric acid hafnium or nitric acid zirconium) can be incorporated, without introducing hydroxylating agent or oxidizing agent (for example, water), while the interface layer is formed. First, the interface layer is formed on the substrate surface for which hydrogen passivation has been carried out, and after, a high-k film is formed by depositing one or more high-k dielectric films on the interface layer. COPYRIGHT: (C)2005,JPO&NCIPI
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