发明名称 FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a field effect transistor suitable for a display device such as a liquid crystal, for high speed operation of high mobility. SOLUTION: The field effect transistor comprises an organic semiconductor layer where the molecules of organic semiconductor material are arrayed through an linkage group. If pentacene molecules are linked together through a linkage group R, an electron route 3 is generated between the pentacene molecules, or a linkage bond. Intervention of the linkage group R allows the controlling of the array of the pentacene molecules, suppressing the scattering of carriers. Thus, the mobility of a pentacene thin film improves for a high speed operation. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005109337(A) 申请公布日期 2005.04.21
申请号 JP20030343307 申请日期 2003.10.01
申请人 CANON INC 发明人 NUMAI TAKAAKI
分类号 H01L51/05;H01L29/786;H01L51/00;H01L51/30;(IPC1-7):H01L29/786 主分类号 H01L51/05
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