| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor single crystal by which EPD (etch pit density) can be further reduced by grasping the exact position of the crystal growth interface in a crucible and controlling the position of a temperature gradient region relative to the crucible in single crystal growth by a vertical boat method, and to provide an apparatus therefor. SOLUTION: Electrodes 54, 55 movable in the vertical direction are arranged at the upper part of the crucible 12. The electrodes 54, 55 are connected to an electric power source 57 through electric wiring 56. An ammeter 58 is connected to the electric wiring 56. The electrodes 54, 55 are brought into contact with the upper interface of a raw material melt B in the crucible 12 from the above during the growth of the crystal. An electric current flows between the electrodes 54, 55 by the contact, the current is detected with the ammeter 58, and the position of the upper interface of the raw material melt B is measured by the detection of the current. The ratio of crystallization of the raw material melt B is derived on the basis of the position of the upper interface, and the position of the crystal growth interface is identified. A main controller 40 controls the calorific value of each heater 30 on the basis of the position of the crystal growth interface, and the position of the temperature gradient region is controlled to a prescribed position. COPYRIGHT: (C)2005,JPO&NCIPI
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