发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.
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申请公布号 |
US2005082638(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20040968623 |
申请日期 |
2004.10.19 |
申请人 |
NAGANO YOSHIHISA;KUTSUNAI TOSHIE;JUDAI YUJI;UEMOTO YASUHIRO;FUJII EIJI |
发明人 |
NAGANO YOSHIHISA;KUTSUNAI TOSHIE;JUDAI YUJI;UEMOTO YASUHIRO;FUJII EIJI |
分类号 |
H01L21/02;H01L21/768;H01L21/8242;H01L23/522;(IPC1-7):H01L29/76;H01L21/320 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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