| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for polishing that can suppress the occurrence of dishing and maintain the polishing speed for a metal material containing copper to be high. <P>SOLUTION: The composition for polishing contains (a) a surface active agent, containing at least one kind selected from among a compound shown by a general Formula (1) and its salts, (b) silicon oxide, (c) at least one kind selected between carboxylic acid and α-amino acid, (d) an anticorrosive, (e) an oxidizer, and (f) water. In the general Formula (1), R<SP>1</SP>represents an alkyl group with C8 to 16, R<SP>2</SP>a hydrogen atom, a methyl group, or ethyl group, R<SP>3</SP>a repetitive unit, consisting of at least one kind selected from among alkylene with C1 to 8, -(CH<SB>2</SB>CH<SB>2</SB>O)1-, and -(CH<SB>2</SB>CH(CH<SB>3</SB>))m-, and X1 a carboxylic group or sulfone group. Here, the total of 1 and (m) is an integer from 1 to 8. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
