发明名称 |
Nitride-based light emitting device and method of manufacturing the same |
摘要 |
Provided are a nitride-based light emitting device using a p-type conductive transparent thin film electrode layer and a method of manufacturing the same. The nitride-based light emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer and an ohmic contact layer sequentially formed on the substrate. The ohmic contact layer is made from a p-type conductive transparent oxide thin film. The nitride-based light emitting device and method of manufacturing the same provide excellent I-V characteristics by improving characteristics of an ohmic contact to a p-cladding layer while enhancing light emission efficiency of the device due to high light transmittance exhibited by a transparent electrode.
|
申请公布号 |
US2005082557(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20040963725 |
申请日期 |
2004.10.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEONG TAE-YEON;SONG JUNE-O;LEEM DONG-SEOK |
分类号 |
H01L21/28;H01L21/285;H01L29/22;H01L29/43;H01L33/32;H01L33/42;H01S5/042;H01S5/343;(IPC1-7):H01L29/22 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|