| 摘要 |
PROBLEM TO BE SOLVED: To provide a quality control technology for detecting, with high sensitivity, the defects in a gate insulating film generated in the manufacturing process of a semiconductor device. SOLUTION: The secondary electrons, having higher energy which are secondarily generated from a wafer 22, are detected with a detector 16 by having the electron beam 39 irradiated once or a several times in a predetermined interval to the surface of the wafer 22, and then generating an amount of secondary electrons larger than the irradiated secondary beam 39. Since the secondary signal changes according to the charged potential of the gate insulating film, the secondary electron signal, having higher energy having reached the detector 16, is displayed as an image with the potential contrast, and leakage fault is identified by evaluating the charged potential of the gate insulating film. COPYRIGHT: (C)2005,JPO&NCIPI
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