发明名称 |
Etching composition, method of preparing the same, method of etching an oxide film, and method of manufacturing a semiconductor device |
摘要 |
An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.
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申请公布号 |
US2005081883(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20040962508 |
申请日期 |
2004.10.13 |
申请人 |
KO YONG-KYUN;CHON SANG-MUN;DOH IN-HOI;JUN PIL-KWON;LEE SANG-MI;LIM KWANG-SHIN;HAN MYOUNG-OK |
发明人 |
KO YONG-KYUN;CHON SANG-MUN;DOH IN-HOI;JUN PIL-KWON;LEE SANG-MI;LIM KWANG-SHIN;HAN MYOUNG-OK |
分类号 |
C08K13/08;B08B3/08;C09K13/08;C11D1/00;C11D1/72;C11D3/02;C11D11/00;C23F1/16;C23F1/24;H01L21/308;H01L21/311;H01L21/8242;H01L27/108;(IPC1-7):B08B3/08 |
主分类号 |
C08K13/08 |
代理机构 |
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代理人 |
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