INTERLAYER CONNECTION METHOD OF SEMICONDUCTOR DEVICE TO IMPROVE CONTACT CHARACTERISTIC OF VIA HOLE,申请号KR19980005815-传众专利搜索

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发明名称	INTERLAYER CONNECTION METHOD OF SEMICONDUCTOR DEVICE TO IMPROVE CONTACT CHARACTERISTIC OF VIA HOLE
摘要
申请公布号	KR100486234(B1)	申请公布日期	2005.04.21
申请号	KR19980005815	申请日期	1998.02.24
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	LEE, SEUNG JAE;SEO, TAE UK
分类号	H01L21/31;(IPC1-7):H01L21/31	主分类号	H01L21/31
代理机构		代理人
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地址

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