| 摘要 |
When making a potential of a floating node 0V at the time of nonselection, electrons leak from the floating node to a photodiode and noise is generated. A MOS type solid-state imaging device comprised of unit pixels 10 , each having a photodiode 11 , a transfer transistor 12 for transferring a signal of this photodiode 11 to a floating node N 11 , an amplifier transistor 13 for outputting a signal of the floating node N 11 to a vertical signal line 22 , and a reset transistor 14 for resetting the floating node N 11 , arranged in a matrix, wherein, as a buffer final stage 29 for driving a drain line 23 , a buffer final stage having an inverter configuration formed by arranging a P-type MOS transistor on a ground side is used, thereby making the potential of the floating node N 11 for example 0.5 V at the time of nonselection and preventing electrons from leaking to the photodiode 11 through the transfer transistor 12.
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