| 摘要 |
PROBLEM TO BE SOLVED: To realize Coulomb blockade devices of a variety of connection structures which can operate at high temperatures. SOLUTION: A silicon layer 2 on an insulating film 1 is processed into such a shape as to have an extremely thin section 3 of a film of at most 5nm and electrode sections 4, 5 which are thicker than the extremely thin section 3. When this structure is thermal-oxidized, a silicon region in the extremely thin section and silicon regions in the electrode sections shift to the right and the left and in the thickness direction and thereby a silicon region which is narrower and thinner than the silicon region in the extremely thick section is formed in a boundary between the silicon region of the extremely thin section and those of the electrode sections. By this method, a tunner barrier having higher energy than the extremely thin section is formed at each side of the extremely thin section 3 and an electric charge can be confined in the extremely thin section 3. Thus, a Coulomb brockade device which can operate at high temperatures can be realized. |
