发明名称 |
Method for forming SOI substrate |
摘要 |
A method for forming SOI substrates including a SOI layer containing germanium and a strained silicon layer disposed on the SOI layer, comprises forming a relaxed silicon-germanium layer on a first silicon substrate using an epitaxial growth method, and forming a porous silicon-germanium layer thereon. A silicon-germanium epitaxial layer is formed on the porous silicon-germanium layer, an oxide layer is formed on a second silicon substrate, the second silicon substrate is bonded where the oxide layer is formed to the first silicon substrate where the silicon-germanium epitaxial layer is formed. Layers are removed to expose the silicon-germanium epitaxial layer and a strained silicon epitaxial layer is formed thereon. The porous silicon-germanium layer prevents lattice defects of the relaxed silicon-germanium layer from transferring to the silicon-germanium epitaxial layer. Therefore, it is possible to form the silicon-germanium layer and the strained silicon layer of the SOI layer without defects.
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申请公布号 |
US6881650(B2) |
申请公布日期 |
2005.04.19 |
申请号 |
US20020307351 |
申请日期 |
2002.12.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG-IL;FUJIHARA KAZUYUKI;LEE NAE-IN;BAE GEUM-JONG;RHEE HWA-SUNG;KIM SANG-SU |
分类号 |
H01L21/205;H01L21/02;H01L21/20;H01L21/30;H01L21/46;H01L21/762;H01L27/12;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/205 |
代理机构 |
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主权项 |
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地址 |
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