Gallium nitride-based semiconductor light emitting device and method

摘要

According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an n⁺⁺ layer disposed non-extensively and flush on one side of the n layer. Furthermore, a p⁺ layer is disposed co-extensively on the n⁺⁺ layer of the LED according to the invention, with a p layer further disposed co-extensively on the p⁺ layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An n⁺ layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite n⁺⁺ layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the n⁺ layer.