发明名称 Semiconductor device having a dummy active region for controlling high density plasma chemical vapor deposition
摘要 A dummy active region is formed in which abrading processes are averaged. A semiconductor device is characterized in that an active region for forming an actual device, a device separation region being formed by a trench, and a dummy active region formed substantially in a rectangular shape are included, and the length of the short side of the dummy active region is less than 1 mum.
申请公布号 US6882024(B2) 申请公布日期 2005.04.19
申请号 US20030614781 申请日期 2003.07.09
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 SAWAMURA KENJI
分类号 H01L21/76;H01L21/762;(IPC1-7):H01L29/00;H01L23/48 主分类号 H01L21/76
代理机构 代理人
主权项
地址