发明名称 |
Semiconductor device having a dummy active region for controlling high density plasma chemical vapor deposition |
摘要 |
A dummy active region is formed in which abrading processes are averaged. A semiconductor device is characterized in that an active region for forming an actual device, a device separation region being formed by a trench, and a dummy active region formed substantially in a rectangular shape are included, and the length of the short side of the dummy active region is less than 1 mum.
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申请公布号 |
US6882024(B2) |
申请公布日期 |
2005.04.19 |
申请号 |
US20030614781 |
申请日期 |
2003.07.09 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
SAWAMURA KENJI |
分类号 |
H01L21/76;H01L21/762;(IPC1-7):H01L29/00;H01L23/48 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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