PROCEDE DE FABRICATION D'UN CIRCUIT INTEGRE COMPORTANT DES TRANSISTORS BIPOLAIRES, EN PARTICULIER A HETEROJONCTION SI/SIGE, ET DES TRANSISTORS A EFFET DE CHAMP A GRILLES ISOLEES, ET CIRCUIT INTEGRE CORRESPONDANT,申请号FR20020001305-传众专利搜索

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发明名称	PROCEDE DE FABRICATION D'UN CIRCUIT INTEGRE COMPORTANT DES TRANSISTORS BIPOLAIRES, EN PARTICULIER A HETEROJONCTION SI/SIGE, ET DES TRANSISTORS A EFFET DE CHAMP A GRILLES ISOLEES, ET CIRCUIT INTEGRE CORRESPONDANT
摘要
申请公布号	FR2835652(B1)	申请公布日期	2005.04.15
申请号	FR20020001305	申请日期	2002.02.04
申请人	STMICROELECTRONICS SA	发明人	MARTY MICHEL;CHANTRE ALAIN
分类号	H01L21/8249;(IPC1-7):H01L21/824	主分类号	H01L21/8249
代理机构		代理人
主权项
地址

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