| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that reflection or the other problem is caused to a high-frequency electric signal and thereby transmission characteristics are severely deteriorated. SOLUTION: The semiconductor device comprises a package 8 for housing a semiconductor element, and a semiconductor element 9 which receives and transmits high-frequency electric signals. The package 8 for housing the semiconductor element comprises a base 1 having a mounting section 1a; a first pad 2, a second pad 3, and a pad 4 for grounding which are mounted on the mounted section 1a; a first wiring conductor 4a drawn from the first pad 2, a second wiring conductor 6 drawn from the second pad 3, and a ground wiring conductor 4b drawn from the pad 4 for grounding; and a connector 7 connected to the second wiring conductor 6. The semiconductor element 9 is mounted on the mounting section 1a of the package 8, and an electrode 10 formed on the bottom face of the semiconductor element 9 is electrically connected to the first pad 2, the second pad 3, and the pad 4 for grounding via a connection member 11. The second pad 3 is formed between at least two pads 4 for grounding, and a distance between the second pad 3 and the pads 4 for grounding adajcent to the second pad 3 is set to 0.05 mm or less. COPYRIGHT: (C)2005,JPO&NCIPI |
