SEMICONDUCTOR STRUCTURE HAVING A REDUCED CONNECTING CAPACITANCE AND METHOD FOR PRODUCING THE SEMICONDUCTOR STRUCTURE
摘要
A semiconductor structure comprises a substrate (101) and a connecting surface (105). Said substrate (101) has an oxide region (103) underneath the connecting surface (105), which is designed for reducing a coupling capacitance between the substrate (101) and the connecting surface (105).
申请公布号
WO2004066385(A3)
申请公布日期
2005.04.14
申请号
WO2004EP00521
申请日期
2004.01.22
申请人
INFINEON TECHNOLOGIES AG;HERZUM, CHRISTIAN;KRUMBEIN, ULRICH;KUEHN, CHRISTIAN;TADDIKEN, HANS
发明人
HERZUM, CHRISTIAN;KRUMBEIN, ULRICH;KUEHN, CHRISTIAN;TADDIKEN, HANS
