| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which is advantageous to layout, and allows high operation speed by incorporating a transistor element with variable body potential at a proper place, and to provide a sense amplifier in a memory. SOLUTION: For a SOI transistor integrated circuit, in a P channel type MOS transistors Qp1, Qp2, a high potential level Vdd, for example a power supply potential is given to each source, respective body potentials are turned to variable potentials in accordance with signal inputs Vin, BVin being inverse to each other, and a control signal CS is given to each gate. Also, in N channel type MOS transistors Qn1, Qn2, a low potential level Vss, for example a ground potential is given to each source and body, and the signal inputs Vin, BVin are supplied to respective gates. A connection node of drains of these transistors Qp1, Qn1 is connected to a signal output part Vout. Also, A connection node of drains of the transistors Qp2, Qn2 is connected to a signal output part BVout. COPYRIGHT: (C)2005,JPO&NCIPI
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