发明名称 |
Storage capacitor design for a solid state imager |
摘要 |
Storage capacitor design for a solid state imager. The imager includes several pixels disposed on a substrate in an imaging array pattern. Each pixel includes a photosensor coupled to a thin film switching transistor. Several scan lines are disposed at a first level with respect to the substrate along a first axis and several data lines are disposed at a second level along a second axis of the imaging array. Several data lines disposed at a second level with respect to the substrate along a second axis of the imaging array pattern. Each pixel comprises a storage capacitor coupled parallel to the photosensor, the storage capacitor comprising a storage capacitor electrode and a capacitor common electrode.
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申请公布号 |
US2005078231(A1) |
申请公布日期 |
2005.04.14 |
申请号 |
US20030687407 |
申请日期 |
2003.10.14 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
LEE JI-UNG;ALBAGLI DOUGLAS;POSSIN GEORGE EDWARD;HENNESSY WILLIAM ANDREW;WEI CHING-YEU |
分类号 |
G01T1/20;G02F1/136;H01L21/02;H01L27/14;H01L27/146;H01L31/09;(IPC1-7):G02F1/136 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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