FORMING METHOD OF FERROELECTRIC MEMORY CIRCUIT

摘要

PROBLEM TO BE SOLVED: To improve a ferroelectric characteristic of a ferroelectric capacitor. SOLUTION: A forming method of a ferroelectric capacitor used in an integrated circuit comprises steps of forming a lower electrode, a ferroelectric layer, and an upper electrode, and forming/defining an upper electrode by using a first mask and thereafter performing second annealing. COPYRIGHT: (C)2005,JPO&NCIPI