发明名称 METHOD FOR DIVIDING SAPPHIRE WAFER USING DRY ETCHING
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for efficiently dividing a sapphire wafer by grinding and lapping the rear surface of a sapphire wafer, processing the wafer in a dry etching step, then scribing the wafer. <P>SOLUTION: The method for dividing semiconductor elements manufactured using a sapphire wafer as a substrate into chips includes a step (A) of grinding the rear surface of the sapphire wafer to have a predetermined thickness, a step (B) of lapping the ground rear surface of the sapphire wafer to have a predetermined thickness, a step (C) of dry etching the lapped rear surface of the sapphire wafer uniformly to have a predetermined thickness, and a step (D) of scribing the dry-etched rear surface of the sapphire wafer. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005101510(A) 申请公布日期 2005.04.14
申请号 JP20040088488 申请日期 2004.03.25
申请人 SAMSUNG ELECTRO MECH CO LTD 发明人 KIM JU HYUN;OH BANG WON
分类号 B28D5/00;H01L21/301;H01L21/3065;H01L21/78;H01L33/32 主分类号 B28D5/00
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