| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-frequency module which can suppress the heat generated by a power transistor at the time of outputting large quantity of electric energy and can sufficiently radiate the heat, and in which a high-frequency filter, such as the surface acoustic wave element etc., can be disposed in the vicinity of the power transistor. <P>SOLUTION: The high-frequency module is constituted by mounting the power transistor 10 composed of a plurality of stages of power amplifiers on the surface of a dielectric substrate 2, and providing a plurality of heatsinks in the substrate 2 immediately under the mounting section of the power transistor through the substrate 2 from the front surface side to the rear surface side. The heatsink provided immediately under the power amplifier in the last stage of the power amplifiers has a minimum diameter which is larger than those of the other heat sinks by≥1.2 times. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
