METHOD FOR MANUFACTURING GROUP III NITRIDE WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride wafer by which a substrate part and the group III nitride wafer can be uniformly separated. SOLUTION: The method for manufacturing the group III nitride wafer 20 comprises separating the wafer 1000 having the substrate part 10 in which an electroconductive group III nitride layer 30 is formed between the substrate part 10 and the group III nitride wafer 20 comprising at least one group III nitride layer, into the substrate part 10 and the group III nitride wafer 20 by decomposing the electroconductive group III nitride layer 30 by passing an electric current through the electroconductive group III nitride layer 30 in an electrolytic solution. COPYRIGHT: (C)2005,JPO&NCIPI