发明名称 |
CLEANING METHOD OF DEPOSITION SYSTEM AND DEPOSITION SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method of a deposition system that prevents a constituent of the deposition system from being damaged, and removes a silicon base deposit in the deposition system. SOLUTION: The cleaning method of a deposition system for removing at least a portion of the silicon nitride deposit deposited on the constituent of the deposition system after using it for depositing a thin film includes: a step for introducing first gas (12) including fluorine gas, and second gas (13) including nitrogen monoxide gas into the deposition system (11); and a step for heating the constituent. The constituent is formed of quartz or silicon carbide, and the silicon nitride deposit includes silicon nitride. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005101583(A) |
申请公布日期 |
2005.04.14 |
申请号 |
JP20040249010 |
申请日期 |
2004.08.27 |
申请人 |
TOSHIBA CORP;L'AIR LIQUIDE SA POUR L'ETUDE & L'EXPLOITATION DES PROCEDE S GEORGES CLAUDE |
发明人 |
TAMAOKI NAOKI;SATO HIROSUKE;SETA SATOKO;ZILS REGIS;SONOBE ATSUSHI;KIMURA TAKAKO;MOMOTA KAYO |
分类号 |
C23C16/44;H01L21/3065;H01L21/31;(IPC1-7):H01L21/31;H01L21/306 |
主分类号 |
C23C16/44 |
代理机构 |
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