THIN FILM DEPOSITION METHOD AND THIN FILM DEPOSITION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a thin film deposition method where a gaseous starting material obtained by vaporizing an organic titanium compound and an added gas reacted therewith are fed into a reaction vessel, and a titanium nitride thin film is produced on the surface of a heated substrate using a chemical vapor deposition, by which, in the case the temperature of the substrate äe.g., a semiconductor substrate such as a CMOS (complementary metal oxide semiconductor) substrate} is controlled to a low temperature region of 150 to 230°C as the heat resisting temperature of various functional materials, a practical film deposition rate can be obtained, and covering properties are also satisfactory, and to provide a thin film deposition system using the method. SOLUTION: In the thin film deposition method, a substrate is heated to the temperature range of 150 to 230°C, and the partial pressure Padded gasof an added gas to the partial pressure Porganometallic gasof a gaseous starting material obtained by vaporizing an organic titanium compound is set to the range of 10≤Padded gas/Porganometallic gas. The thin film deposition system uses the method. COPYRIGHT: (C)2005,JPO&NCIPI