| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method and a sputtering system capable of improving the film quality and uniformity in film thickness of a film deposited on a substrate. SOLUTION: Regarding the sputtering system where a metallic target material 15b is collided with argon ions in a vacuum chamber 11, metallic clusters emitted from the metallic target material 15b are deposited on a silicon wafer 50 to deposit a metallic film, a planar target 13 ionizing the surfaces of the metallic clusters emitted from the metallic target material 15b to an optional direction, a collimator 23 allowing only the metallic clusters 40a to 40c emitted from the metallic target material 15b and progressing to a specified direction to pass and capturing the metallic clusters progressing to the other directions; and a pair of electrode plates 25 forming an electric field E in a direction crossed with the specified direction on a space 31 on the progressing passage of the metallic clusters 40a to 40c are provided. COPYRIGHT: (C)2005,JPO&NCIPI
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