| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a resistance element whose resistance value is not changed even when an applied voltage is changed. SOLUTION: A resistance element 4 is composed of a P-type semiconductor region surrounded by an N-type semiconductor region. A Schottky barrier diode whose anode is connected to respective terminals of the resistance element 4 is provided inside the N-type semiconductor region in which the semiconductor element 4 is formed. The forward threshold voltage of the Schottky barrier diode is set to be lower than the forward threshold voltage of a P-N junction which is composed of the N-type semiconductor region and of the P-type semiconductor region. By this constitution, a potential which is by the forward threshold voltage of the Schottly barrier diode smaller than that of the P-type semiconductor region is applied to the N-type semiconductor region, and a potential difference is not changed. As a result, the resistance value of the resistance element 4 is not changed. |
