| 摘要 |
A method for forming a contact hole of a semiconductor device is provided to simplify bit line contact processing without damage of a nitride layer by depositing an etch stop layer at a cell region. Gates(22) having a plurality of spacers(22d) are formed on a silicon substrate(21) defined with a cell region(X) and a peripheral region(Y). A first interlayer dielectric(23) is formed on the resultant structure. A landing plug(24) is formed between the gates. An etch stop layer(21) is selectively formed on the substrate of the cell region. A second interlayer dielectric(26) is formed on the resultant structure. By etching the second interlayer dielectric, the etch stop layer and the first interlayer dielectric, a first contact hole(27) for exposing the landing plug and a second contact hole(28) for exposing the substrate and the gate of the peripheral region are formed simultaneously.
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