发明名称 Electron beam writing equipment and method
摘要 <p>The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light. Electron beam writing equipment has an electron source (101); an electron optical system illuminating a sample (124) with an electron beam emitted from the electron source, to form a desired pattern on the sample by scanning; a stage (125) mounting the sample; a mark substrate (126) provided on the stage; means (128) beaming a light beam for position detection, which is on the same side as the illumination direction of the electron beam, for illuminating the mark substrate; light detection means (123) which is on the same side as the means beaming a light beam, for detecting light reflected from the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate, for detecting a transmitted electron obtained by illumination of the mark substrate by the electron beam, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.</p>
申请公布号 EP1523028(A2) 申请公布日期 2005.04.13
申请号 EP20040023853 申请日期 2004.10.06
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION;CANON KABUSHIKI KAISHA 发明人 SOHDA, YASUNARI;KAMIMURA, OSAMU;NAKAYAMA, YOSHINORI;TANIMOTO, SAYAKA;MURAKI, MASATO
分类号 G01B11/00;H01J37/304;G03F7/20;G03F9/00;H01J37/20;H01J37/305;H01J37/317;H01L21/027;H01L21/68;(IPC1-7):H01J37/304 主分类号 G01B11/00
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