发明名称 Semiconductor fabrication apparatus and pattern formation method using the same
摘要 <p>The semiconductor fabrication apparatus of this invention includes an exposure section (30) provided within a chamber (10) for exposing a design pattern on a resist film applied on a wafer (20), and a liquid recycle section (40) for supplying, onto the wafer, a liquid (23) for use in immersion lithography for increasing the numerical aperture of exposing light during exposure while recycling the liquid. The liquid recycle section includes a liquid supply part (41) for supplying the liquid onto the resist film (21) of the wafer, a liquid discharge part (42) for discharging and recovering the liquid from above the wafer, and an impurity removal part (43) for containing the liquid and removing an impurity included in the liquid.</p>
申请公布号 EP1522894(A2) 申请公布日期 2005.04.13
申请号 EP20040023824 申请日期 2004.10.06
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ENDO, MASAYUKI;SASAGO, MASARU
分类号 G03F7/20;H01L21/027;(IPC1-7):G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项
地址