发明名称 Silicon wafer break pattern, silicon substrate, and method of generating silicon wafer break pattern
摘要 In order to provide a silicon wafer break pattern that stabilizes the location and shape of the breaks at weak spots of the break pattern and that reduces waste, the through-holes of the break pattern is disposed along a scribe line, a first group of the through-holes are substantially disposed on only a first side of the scribe line, and a second group of the through-holes are substantially disposed on only a second side of the scribe line.
申请公布号 US6878609(B2) 申请公布日期 2005.04.12
申请号 US20030732272 申请日期 2003.12.11
申请人 SEIKO EPSON CORPORATION 发明人 WANIBE AKIHISA;OKAZAWA NORIAKI;MIYATA YOSHINAO;SHINBO TOSHINAO;AKASU TETSUYA;AKACHI HISASHI
分类号 H01L21/306;B32B3/10;B65D65/28;G09F3/00;H01L21/301;H01L21/302;H01L21/304;H01L21/46;H01L21/461;H01L21/78;(IPC1-7):H01L21/46 主分类号 H01L21/306
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