METHOD OF RECLAIMING SILICON WAFERS

摘要

A method for reproducing a silicon wafer is provided to remove a copper component in the inner side and outer side of a silicon wafer by removing one portion of a wafer surface by heating during a predetermined time. A method for reproducing a silicon wafer includes a film removing process, a lapping process and a cleaning process. A heating process that the silicon wafer is heated during 20 minutes to 5 hours at 150 to 300°C is performed between the film removing process and the lapping process. The heating process includes a mechanical removing process. The heating process includes a chemical removing process.