发明名称 Memory array and method with simultaneous read/write capability
摘要 A memory device includes a plurality of memory arrays, each memory array being coupled to an input data bus and an output data bus, a clock generator that generates an internal clock signal to form at least one transfer cycle to control timing of data transfer to and from the plurality of memory arrays, and a controller that controls read and write operations from and to the plurality of memory arrays. In one embodiment, the controller receives a command word containing at least a first command and a second command and executes the first and second command on the same transfer cycle.
申请公布号 US6880056(B2) 申请公布日期 2005.04.12
申请号 US20020109258 申请日期 2002.03.28
申请人 HEWLETT-PACKARD DEVELOPMENT, L.P. 发明人 KOOTSTRA LEWIS STEPHEN
分类号 G11C7/10;G11C11/4076;(IPC1-7):G06F12/00 主分类号 G11C7/10
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