SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD THEREOF

摘要

A semiconductor memory device and a driving method thereof are provided to obtain a simple structure by storing four bits in one memory cell without increasing the number of manufacturing process. A first active region(101) is defined as a line shape on a surface of a substrate. A second active region(102) is defined as a line shape on a surface of the substrate so as to have a cross region(103) crossing with the first active area. A first diffusion region and the second diffusion region are formed on the first active region so as to interpose the cross region therebetween. A third diffusion region and the fourth diffusion region are formed on the second active region so as to interpose the cross region therebetween. A gate structure(Gn) is formed as a line shape on the substrate. A first terminal to the fourth terminal are respectively connected with the first diffusion region to the fourth diffusion region.