Non-volatile memory cells having floating gate and method of forming the same,申请号KR20020081790-传众专利搜索

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发明名称	Non-volatile memory cells having floating gate and method of forming the same
摘要
申请公布号	KR100481871(B1)	申请公布日期	2005.04.11
申请号	KR20020081790	申请日期	2002.12.20
申请人		发明人
分类号	H01L27/115;H01L21/28;H01L21/336;H01L21/8247;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L27/115	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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