| 摘要 |
FIELD: electrovacuum electronic engineering; semiconductor photoemissive devices operating in visible and close-to-ultraviolet region. ^ SUBSTANCE: proposed device that can be used to develop new class of effective photoemissive instruments around wide-range semiconductors has semiconductor material layer based on nitrides of third-group elements of electron conductivity with concentration of minimum 5.1016 cm-3, forbidden gap width Eg, electron affinity chi, and electron work function ϕ on working surface of mentioned semiconductor material turned into vacuum and activated by alkali metal or its oxide meeting relationship Eg > chi, eV; chi > ϕ, eV. ^ EFFECT: enlarged spectral range and enhanced reproducing ability of spectral characteristics. ^ 19 cl, 9 dwg |
