SELF-ALIGNED V0-CONTACT FOR CELL SIZE REDUCTION OF FERAM DEVICES

摘要

An FeRAM (400) comprising includes a ferroelectric material (211) sandwiched between a top electrode (207) and a bottom electrode (209). A V0-contact (405) provides an electrical connection with an underlying CS-contact (223). The V0-contact is aligned using the bottom electrode. A liner layer (403) covers a sidewall of the bottom electrode and provides a stop to an etch a hole forming the V0-contact. A method is utilized to form a V0-contact in an FeRAM. An Fe capacitor of the FeRAM is encapsulated, a bottom electrode is etched, a liner layer is deposited covering a sidewall of the bottom electrode, and a hole is etched for the V0-contact until the etching is stopped by the liner layer.