COMPLEMENTARY METAL OXIDE SEMICONDUCTOR IMAGE SENSOR AND METHOD FOR FABRICATING THEREOF

摘要

A CMOS(complementary metal oxide semiconductor) image sensor is provided to prevent a characteristic of a device from being deteriorated by crosstalk by effectively irradiating the light having transmitted each lens part of a micro lens to a photodiode of a corresponding CMOS device. A semiconductor substrate(10) is prepared. An isolation part(16) is supplied to the semiconductor substrate to form an isolation region. A photocharge generating part is formed between the isolation parts to receive incident light from the outside and generate and accumulate charges. A light collecting part collects the light from the outside and irradiates the collected light to a corresponding photocharge generating part, installed over the photocharge generating part. A crosstalk blocking part prevents the light having transmitted the light collecting part from being irradiated to an adjacent photochrage generating part adjacent to the corresponding photocharge generating part.