METHOD AND STRUCTURE OF VERTICAL STRAINED SILICON DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method and structure of a vertical strained silicon device.

SOLUTION: A trench capacitor vertical-transistor DRAM cell in an SiGe wafer compensates for overhang of a pad nitride, by forming an epitaxial strained silicon layer on trench walls that improves transistor mobility, removes voids from the polysilicon filling, and reduces resistance on the bit line contact. Another feature is that by forming a vertical strained silicon channel, the performance of the vertical device is improved.

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