| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical semiconductor device which ensures stable reverse breakdown voltage and has improved utilization efficiency of the chip surface. SOLUTION: The semiconductor device includes an n-type semiconductor substrate 1, in which a p-type collector layer 2 is formed on the second principal plane, a trench 13 is formed on the outer edge so as to reach from the first principal plane to the collector layer 2 to surround the inside, and a p-type isolation region 14 coupled to the collector layer 2 is formed with the sidewall by diffusion. The inside of the trench 13 is filled with fillings 16. COPYRIGHT: (C)2005,JPO&NCIPI
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