SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

摘要

A semiconductor device is provided to reduce contact resistance between a source/drain region and an upper conductor by forming a metal silicide layer having a sufficient thickness on the source/drain region. A pin pattern(104a) protrudes to the substrate, composed of a channel part(103b) and a source/drain part(103a,103c) that comes in contact with the channel part and has a high height as compared with the channel part. A gate electrode(118a) passes through the upper surface and the upper part of both sidewalls of the channel part. A gate insulation layer(116) is interposed between the channel part and the gate electrode. Impurity diffusion layers are formed in at least the source part and the drain part.