| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a stress produced between a semiconductor composition 2 and a dielectric layer 15 covering its side, in the semiconductor device which is equipped with a base plate 1, the semiconductor composition 2 located on the base plate 1 and having a semiconductor substrate 5 and a plurality of columnar electrodes 13 positioned on the semiconductor substrate 5, dielectric layers 15, 16 located on the semiconductor composition 2 and on the base plate 1 around its circumference, and an upper layer re-wiring 18 located on the dielectric layer 16 to be connected with the columnar electrodes 13 of the semiconductor composition 2 and having a connection pad portion whose at least part is located on the dielectric layer 15 around the circumference of the semiconductor composition 2. <P>SOLUTION: The side of the semiconductor composition 2 is formed as an inclined surface 4, thereby, the stress produced between the semiconductor composition 2 and the dielectric layer 15 covering its side can be reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
