| 摘要 |
PROBLEM TO BE SOLVED: To easily and securely obtain a semiconductor device capable of obtaining desired performance as to an inductive passive element and to obtain a high-precision inductive passive element which has a small variation in characteristic. SOLUTION: When the inductive passive element is formed of a wire on an element separating and insulating film 2 formed on a silicon substrate 1, a substrate which has a 2 to 4 kΩcm specific resistance value, preferably, a 3 kΩcm specific resistance value is used as the silicon substrate. Further, a substrate is used which has a specific resistance value obtained fromρ<SB>Si</SB>=20/(2πε<SB>Si</SB>ε<SB>0</SB>), whereε<SB>0</SB>is a dielectric constant under a vacuum,ε<SB>Si</SB>is a specific dielectric constant of silicon, and (f) is a signal frequency. COPYRIGHT: (C)2005,JPO&NCIPI
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