发明名称 Method for polishing copper layer and method for forming copper layer wiring using the same
摘要 Disclosure is a method for polishing a copper layer and a method for forming a copper layer wiring using the same. The method for polishing the copper layer is carried out through a CMP process by using slurry having a polishing rate of at least 10,000 �/min. The method for forming the copper layer wiring includes a step of forming a sacrificial layer pattern having a trench on a substrate. Then, the copper layer is continuously formed on a sidewall of the trench, a bottom surface of the trench, and on the sacrificial layer pattern. Then, the copper layer is polished so as to expose a surface of the sacrificial layer pattern by using the method. The copper layer is effectively polished when the method is applied to a polishing process of the copper layer.
申请公布号 US2005074976(A1) 申请公布日期 2005.04.07
申请号 US20030733650 申请日期 2003.12.11
申请人 KIM HYUNG JUN 发明人 KIM HYUNG JUN
分类号 B24B37/00;C09K3/14;H01L21/28;H01L21/302;H01L21/304;H01L21/3205;H01L21/321;H01L21/768;H01L23/52;H01L23/532;(IPC1-7):H01L21/302 主分类号 B24B37/00
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