发明名称 Dual gate cascade amplifier
摘要 A dual gate cascade amplifier includes a first transistor and a second transistor electrically connected in series, the second transistor including a first parallel transistor and a second parallel transistor, the first parallel transistor and the second parallel transistor being electrically connected in parallel, a first channel electrically connecting a first end channel region of the first transistor and a second end channel region, wherein one of the first or second end channel regions is a source and the other of the first or second end channel regions is a drain, the second end channel region being a common end channel region shared by the first and second parallel transistors, and a second channel electrically connected to the second end channel region and extending away from the first transistor.
申请公布号 US2005073366(A1) 申请公布日期 2005.04.07
申请号 US20040956082 申请日期 2004.10.04
申请人 JUNG SUNG-JAE;KIM HOON-TAE;EO YUN-SEONG;LEE KWANG-DU;JEON SANG-YOON 发明人 JUNG SUNG-JAE;KIM HOON-TAE;EO YUN-SEONG;LEE KWANG-DU;JEON SANG-YOON
分类号 H01L27/02;H01L27/07;H03F1/22;(IPC1-7):H03F1/22 主分类号 H01L27/02
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