| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces electric resistance of wiring. SOLUTION: The semiconductor device has a thin film transistor formed on a substrate having an insulated surface, a silicon nitride film formed on a gate electrode of the thin film transistor, an organic resin film formed on the silicon nitride film and first wiring formed on the organic resin film and the first wiring is constituted by being electrically connected with second wiring consisting of the same material as that of the gate electrode via a contact hole provided on the silicon nitride film and the organic resin film. COPYRIGHT: (C)2005,JPO&NCIPI |
