ELECTROSTATIC DISCHARGE-PROTECTED INTEGRATED CIRCUIT

摘要

An electrostatic discharge-protected integrated circuit comprises a transistor (T) which is connected by way of one of the drain and source terminals (T1, T2) to a connection (1) for applying a first supply voltage (VDD) and by way of one of the respective other drain and source terminals (T1, T2) to a connection for applying a second supply voltage (VSS). A first capacitor (C1) and a second capacitor (C2) are inserted as capacitive voltage dividers between the connection for applying the first supply voltage and the connection for applying the second supply voltage. The common dual node (K3) of the first and second capacitor is connected to the gate terminal (T3) of the transistor. If there is a discharge, the transistor is conducting and short-circuits a voltage that is not suitable for duly operating the functional unit between the connection (1) for applying the first supply voltage and the connection (2) for applying the second supply voltage.